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Examples

  • Infineon Technologies CoolMOS: 900V superjunction MOSFET has low on-resistance

    unknown title 2009

  • Typically, when either of these characteristics is reduced, the other increases, but with its superjunction DTMOS II design, Toshiba has been able to reduce both simultaneously, enabling higher power efficiency and switching performance than conventional MOSFETs.

    EE Times-Asia 2008

  • -- Due to the superjunction structure, R (DS) (ON) can be as low as 0.19 ohm (max.) for the 20A devices, at V (DS) = 600V.

    ThomasNet Industrial Newsroom - Today's New Product News 2008

  • Typically, when either of these characteristics is reduced, the other increases, but with its superjunction DTMOS II design, Toshiba has been able to reduce both simultaneously, enabling higher power efficiency and switching performance than conventional MOSFETs.

    ThomasNet Industrial Newsroom - Today's New Product News 2008

  • Developed by Toshiba Corp., the DTMOS II MOSFETs employ a superjunction structure that enables a reduction in both on-state resistance

    ThomasNet Industrial Newsroom - Today's New Product News 2008

  • Sept. 3 -- Toshiba America Electronic Components, Inc. (TAEC) * today announced a family of 600V DTMOS II superjunction MOSFETs that contribute to higher efficiency of switched-mode power supplies, such as AC adapters in notebook and desktop computers, servers, flat panel displays, and ballasts used in lighting, due to lower on-state resistance

    ThomasNet Industrial Newsroom - Today's New Product News 2008

  • In these devices, Toshiba refined the superjunction structure with the company's second generation DTMOS technology.

    EE Times-Asia 2008

  • In these devices, Toshiba refined the superjunction structure with the company's second generation DTMOS technology.

    ThomasNet Industrial Newsroom - Today's New Product News 2008

  • -- Based on (R (DS) (ON) x (Q (g))), the Toshiba DTMOS II MOSFETs feature competitive performance among superjunction MOSFETs available in the market today.

    ThomasNet Industrial Newsroom - Today's New Product News 2008

  • 600 V DTMOS II superjunction MOSFETs include 12, 15, and 20 A versions offered in 4 package choices each with sizes from 9.2 x 10.7 x 3.0 mm to 15.9 x 23.3 x 4.8 mm.

    ThomasNet Industrial Newsroom - Today's New Product News 2008

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